november 2011 doc id 17982 rev 1 1/7 7 STTH102-Y automotive high efficiency ultrafast diode features very low conduction losses negligible switching losses low forward and reverse recovery times high junction temperature ecopack ? 2 compliant component aec-q101 qualified description the STTH102-Y, which is using st?s new 200 v planar technology, is specially suited for switching mode base drive and transistor circuits. the device is also intended for use as a free wheeling diode in power supplies and other power switching applications for automotive. table 1. device summary symbol value i f(av) 1 a v rrm 200 v t j (max) 175 c v f (max) 0.78 v t rr (max) 20 ns k a sma (jedec do-214ac) stth102ay www.st.com
characteristics STTH102-Y 2/7 doc id 17982 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.65 x i f(av) + 0.130 i f 2 (rms) table 2. absolute rating (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(av) average forward current t l = 148 c = 0.5 1 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 40 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to +175 c dv/dt critical rate of rise of reverse voltage 10000 v/s table 3. thermal resistance symbol parameter value unit r th(j-l) junction to lead 30 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 1 a t j = 125 c 1 25 v f (2) forward voltage drop t j = 25 c i f = 700 ma 0.90 v i f = 1 a 0.97 t j = 125 c i f = 1 a 0.68 0.78 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2% table 5. dynamic electrical characteristics symbol parameter tests conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 0.5 a i rr = 0.25 a i r = 1 a 12 20 ns t fr forward recovery time t j = 25 c i f = 1 a di f /dt = 50 a/ms v fr = 1.1 x v f max 50 ns v fp forward recovery voltage t j = 25 c i f = 1 a di f /dt = 50 a/ms 1.8 v
STTH102-Y characteristics doc id 17982 rev 1 3/7 figure 1. average forward power dissipation versus average forward current figure 2. average forward current versus ambient temperature ( = 0.5) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 p (w) f(av) i (a) f(av) t =tp/t tp = 1 = 0.5 = 0.05 = 0.1 = 0.2 i (a) f(av) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 r =120c/w th(j-a) r=r th(j-a) th(j-i) t =tp/t tp t (c) amb figure 3. relative variation of thermal impedance junction to ambient versus pulse duration figure 4. forward voltage drop versus forward current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 single pulse t =t /t p t p z/r th(j-a) th(j-a) = 0.5 = 0.2 = 0.1 t (s) p epoxy printed circuit board, e = 35 m, recommended pad layout (cu) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i (a) fm v (v) fm t =125c (maximum values) j t =125c (typical values) j t =25c (maximum values) j figure 5. junction capacitance versus reverse voltage applied (typical values) figure 6. reverse recovery time versus di f /dt (90% confidence) 1 10 100 1 10 100 1000 c(pf) f=1mhz v =30mv t =25c osc rms j v (v) r 0 10 20 30 40 50 60 70 1 10 100 1000 t (ns) rr di /dt(a/s) f i =1a f v =100v t =125c r j t =125c j t =25c j
characteristics STTH102-Y 4/7 doc id 17982 rev 1 figure 7. peak recovery current versus di f /dt (90% confidence) figure 8. reverse recovery charges versus di f /dt (90% confidence) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 i (a) rm di /dt(a/s) f i =1a f v =100v t =125c r j t =125c j t =25c j 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 1 10 100 1000 q (nc) rr di /dt(a/s) f i =1a f v =100v r t =125c j t =25c j figure 9. relative variations of dynamic parameters versus junction temperature figure 10. thermal resistance junction to ambient versus copper surface under each lead 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175 i;t;q[t] / rm rr rr j i ; t ; q [t =25c] rm rr rr j t (c) j i rm t rr q rr i=i di /dt=200a/s f f(av) f v =100v r 0 10 20 30 40 50 60 70 80 90 100 110 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r (c/w) th(j-a) s(cm2) epoxy printed circuit board fr4, copper thickness: 35 m
STTH102-Y package information doc id 17982 rev 1 5/7 2 package information epoxy meets ul94 v0 lead-free packages in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 11. footprint (dimensions in mm) table 6. sma dimensions ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.094 a2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 d 2.25 2.90 0.089 0.114 e 4.80 5.35 0.189 0.211 e1 3.95 4.60 0.156 0.181 l 0.75 1.50 0.030 0.059 e c l e1 d a1 a2 b 2.63 5.43 1.4 1.64 1.4
ordering information STTH102-Y 6/7 doc id 17982 rev 1 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode stth102ay u12y sma 0.068 g 5000 tape and reel table 8. revision history date revision changes 07-nov-2011 1 initial release.
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